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CIGS2 Thin-Film Solar Cells on Flexible Foils for Space Power

机译:CIGS2薄膜太阳能电池在空间动力用柔性箔上

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摘要

CuIn(1-x)Ga(x)S2 (CIGS2) thin-film solar cells are of interest for space power applications because of the near optimum bandgap for AM0 solar radiation in space. CIGS2 thin film solar cells on flexible stainless steel (SS) may be able to increase the specific power by an order of magnitude from the current level of 65 Wkg(sup -1). CIGS solar cells are superior to the conventional silicon and gallium arsenide solar cells in the space radiation environment. This paper presents research efforts for the development of CIGS2 thin-film solar cells on 127 micrometers and 20 micrometers thick, bright-annealed flexible SS foil for space power. A large-area, dual-chamber, inline thin film deposition system has been fabricated. The system is expected to provide thickness uniformity of plus or minus 2% over the central 5" width and plus or minus 3% over the central 6" width. During the next phase, facilities for processing larger cells will be acquired for selenization and sulfurization of metallic precursors and for heterojunction CdS layer deposition both on large area. Small area CIGS2 thin film solar cells are being prepared routinely. Cu-rich Cu-Ga/In layers were sputter-deposited on unheated Mo-coated SS foils from CuGa (22%) and In targets. Well-adherent, large-grain Cu-rich CIGS2 films were obtained by sulfurization in a Ar: H2S 1:0.04 mixture and argon flow rate of 650 sccm, at the maximum temperature of 475 C for 60 minutes with intermediate 30 minutes annealing step at 120 C. Samples were annealed at 500 C for 10 minutes without H2S gas flow. The intermediate 30 minutes annealing step at 120 C was changed to 135 C. p-type CIGS2 thin films were obtained by etching the Cu-rich layer segregated at the surface using dilute KCN solution. Solar cells were completed by deposition of CdS heterojunction partner layer by chemical bath deposition, transparent-conducting ZnO/ZnO: Al window bilayer by RF sputtering, and vacuum deposition of Ni/Al contact fingers through metal mask. PV parameters of a CIGS2 solar cell on 127 micrometers thick SS flexible foil measured under AM 0 conditions at NASA GRC were: V(sub oc) = 802.9 mV, J(sub sc) = 25.07 mA per square centimeters, FF = 60.06%, and efficiency 0 = 8.84%. For this cell, AM 1.5 PV parameters measured at NREL were: V(sub oc) = 788 mV, J(sub sc) = 19.78 mA per square centimeter, FF = 59.44%, efficiency 0 = 9.26%. Quantum efficiency curve showed a sharp QE cutoff equivalent to CIGS2 bandgap of approximately 1.50 eV, fairly close to the optimum value for efficient AM0 PV conversion in the space.
机译:CuIn(1-x)Ga(x)S2(CIGS2)薄膜太阳能电池由于其在太空中AM0太阳辐射的最佳带隙而对空间电源应用非常重要。柔性不锈钢(SS)上的CIGS2薄膜太阳能电池可能能够将比功率从当前的65 Wkg(sup -1)水平提高一个数量级。在空间辐射环境中,CIGS太阳能电池优于常规的硅和砷化镓太阳能电池。本文介绍了开发用于空间电源的127微米和20微米厚,光亮退火柔性SS箔的CIGS2薄膜太阳能电池的研究工作。已经制造了大面积,双室,在线薄膜沉积系统。该系统有望在中心5“宽度上提供正负2%的厚度均匀性,在中心6”宽度上提供正负3%的厚度均匀性。在下一阶段,将获得用于处理较大电池的设施,以用于金属前驱物的硒化和硫化以及大面积上的异质结CdS层沉积。小面积CIGS2薄膜太阳能电池正在常规制备中。将富铜的Cu-Ga / In层溅射沉积在未加热的MoGa涂层的SS箔上,该箔由CuGa(22%)和In靶制成。通过在Ar:H2S 1:0.04混合物中进行硫化,氩气流速为650 sccm,最高温度为475 C,硫化60分钟,在30℃的中间30分钟退火步骤下,获得了粘附力好的大晶粒富Cu的CIGS2薄膜。 120℃。在没有H2S气流的情况下,将样品在500℃退火10分钟。将在120℃的30分钟中间退火步骤更改为135℃。通过使用稀KCN溶液蚀刻表面富集的富Cu层获得p型CIGS2薄膜。通过化学浴沉积CdS异质结伙伴层,通过RF溅射透明导电的ZnO / ZnO:Al窗口双层以及通过金属掩模真空沉积Ni / Al接触指来完成太阳能电池。在NASA GRC在AM 0条件下测量的127微米厚SS柔性箔上的CIGS2太阳能电池的PV参数为:V(sub oc)= 802.9 mV,J(sub sc)= 25.07 mA /平方厘米,FF = 60.06%,效率0 = 8.84%。对于此电池,在NREL处测得的AM 1.5 PV参数为:V(sub oc)= 788 mV,J(sub sc)= 19.78 mA /平方厘米,FF = 59.44%,效率0 = 9.26%。量子效率曲线显示出一个陡峭的QE截止点,相当于CIGS2带隙约为1.50 eV,非常接近该空间中有效AM0 PV转换的最佳值。

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